代表性论文 [1] Zhang Wenting, Wang Fenxia, Li Yumiao, Guo Xiaoxing, Yang Jianhong. Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer[J]. Chinese physics B. 2019, 28(8):86801. [SCI] [2] Zhang Wenting, Guo Xiaoxing, Yin Jinchao, Yang Jianhong. Organic Field-Effect Transistor Memory Device Based on an Integrated Carbon Quantum Dots/Polyvinyl Pyrrolidone Hybrid Nanolayer. Electronics. 2020, 9(5): 753. [SCI] [3] Guo Xiaoxing, Zhang Wenting, Yin Jinchao, Xu Yan, Bai Yujie, Yang Jianhong. Ultraviolet-electrical erasing response characteristics of Ag@SiO2 core-shell functional floating gate organic memory. Organic Electronics. 2021, 93: 106149. [SCI] [4] Hu Liu, Peifeng Li, Xiaoyu Zhou, Pengyu Wang, Yubin Li, Lei Pan, Wenting Zhang and Yao Li. A High-Performance InGaAs Vertical Electron–Hole Bilayer Tunnel Field Effect Transistor with P+-Pocket and InAlAs-Block. Micromachines. 2024(14): 2049 [SCI] [5] Zhang Wenting, Shang Junliang, Li Shuang, Ma Mengqi, Ma Dongping. Nonvolatile Organic Floating-Gate Memory Using N2200 as Charge-Trapping Layer. Applied Sciences, 2025: 15(5), 2278.
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