代表性论文 [1] Wang Yongshun, Feng Jingjing, Liu Chunjuan Wang Ziting Zhang Caizhen. Improvements on voltage-resistant performance of bipolar static induction transistor (BSIT) with buried gate structure. Science China: Information Sciences. (Accepted for publication in Aug. 2012, SCI 收录) [2] Wang Yongshun, Feng Jingjing, Liu Chunjuan, Wang Zaixing, Zhang Caizhen, and Chang Peng. Improvement on the dynamical performance of a power bipolar static induction transistor with a buried gate structure. Chinese Journal of Semiconductors. Vol. 32, No.11 Nov. 2011, P114005-1¬5(EI收录) [3]Wang Yongshun, Li Hairong, Wang Ziting and Li Siyuan. Improvements on High Voltage Performance of Power Static Induction Transistors. Chinese Journal of Semiconductors，Vol. 30, No.10 Apr. 2009, P 104003-1~5(EI收录). [4] Wang Yongshun, Liu Chunjuan, Gu Shengjie and Zhang Caizhen. Ohmic contact behaviour of Co/C/4H-SiC structures. Chinese Journal of Semiconductors，Vol. 32, No.4 Apr. 2011, P 04003-1-4(EI收录). [5] Wang Yongshun, Luo Xianliang, Li Hairong, Wang Ziting, Wu Rong, Zhang Caizhen and Li Siyuan. Improvements on Radiation-Resistant Performance of Static Induction Transistor. Science China: Information Sciences. Vol.53, No.5, 2010, (SCI 收录) [6] Wang Yongshun, Li Hairong, Wu Rong and Li Siyuan. Mechanism of Reverse Snapback on I-V Characteristics of Power SITHs with Buried Gate Structure. Chinese Journal of Semiconductors. Vol.29, No.3 Mar. 2008. P101-106.(EI收录) [7] Yongshun Wang, Rong Wu, Chunjuan Liu and Ziting Wang. Researches on the Injected Charge Potential Barrier Occurring in the Static Induction Transistor in the High Current Region. Semiconductor Science and Technology. 23 (2008) Feb. P152-156. (SCI收录) [8] Wang Yongshun, Wu Rong, Liu Chunjuan and Li Siyuan. Improvement on High Current Performances of Static Induction Transistor. Chinese Journal of Semiconductors, Vol.28, No.8， Aug. 2007. P1192-1197.(EI收录) [9] Yongshun Wang, Siyuan Li, Dongqing Hu. Dependence of I-V Characteristics on Structural Parameters of Static Induction Transistor. Solid-State Electronics. 48(2004) P55-59.(SCI收录) [10] Yongshun Wang, Siyuan Li, JianHong Yang and Dongqing Hu. A Novel Buried-Gate Static Induction Transistor with Diffused Source Region. Semiconductor Science and Technology. 19 (2004) P152-156. (SCI收录) [11] Wang Yongshun, Li Siyuan and Hu Dongqing. A Microwave High Power Static Induction Transistor with Dielectrics Gate Structure. Chinese Journal of Semiconductors. Vol.25, No.1 Jan. 2004. P19-25.(EI收录) [12] Wang Yongshun, Li Siyuan and Hu Dongqing. Static Induction transistor with Planar Type Buried Gate. Chinese Journal of Semiconductors. Vol.25, No.2 Feb. 2004. P126-132. (EI收录) [13] Wang Yongshun, Liu Su, Li Siyuan, and Hu Dongqing. Electrical Performance of Static Induction Transistor with Mixed I-V Characteristics. Chinese Journal of Semiconductors. Vol.25, No.3, Mar. 2004. P266-271. (EI收录) [14] Liu Chunjuan and Liu Su. Dependence of Transient Performances on the Potential Distribution in the Channel of Static Induction Thyristor. Chinese Journal of Semiconductors，Vol. 33, No.4 Apr. 2012, (EI收录). [15] Zhang Caizhen, Wang Yongshun, Liu Chunjuan and Wang Zaixing. A New Static Induction Thyristor with High Forward Blocking Voltage and Excellent Switching Performances. Vol. 31, No.3. 2010 (EI收录). |
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